| m面蓝宝石上ZnO/ZnMgO多量子阱的制备及发光特性研究 |
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| 引用本文： | 宿世臣,吕有明,梅霆.m面蓝宝石上ZnO/ZnMgO多量子阱的制备及发光特性研究[J].物理学报,2011,60(9):96801-096801. |
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| 作者姓名： | 宿世臣 吕有明 梅霆 |
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| 作者单位： | (1)华南师范大学光电子材料与技术研究所,广州 510631; (2)深圳大学材料科学与工程学院,深圳 518060 |
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| 基金项目： | 国家自然科学基金(批准号:60976036),广东省自然科学基金(批准号:8151806001000009)和广东省育苗项目(批准号:LYM10063)资助的课题. |
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| 摘 要： | 利用等离子体辅助分子束外延设备(P-MBE)在m面的蓝宝石(m-Al2O3)衬底上制备了ZnO/Zn0.85Mg0.15O多量子阱.反射式高能电子衍射谱(RHEED)图样的原位观察表明,多量子阱结构是以二维模式生长的.从光致发光谱中可以看到ZnO/Zn0.85Mg0.15O多量子阱在室温仍具有明显的量子限域效应.在290 K时阱宽为3 nm的ZnO/Zn0.85关键词：
等离子体辅助分子束外延
ZnO多量子阱
光致发光
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| 关 键 词： | 等离子体辅助分子束外延 ZnO多量子阱 光致发光 |
| 收稿时间： | 2011-01-17 |
Fabrication and optical properties of ZnO/ZnMgO multiple quantum wells on m-sapphire substrates |
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| Su Shi-Chen,Lü You-Ming,Mei Ting.Fabrication and optical properties of ZnO/ZnMgO multiple quantum wells on m-sapphire substrates[J].Acta Physica Sinica,2011,60(9):96801-096801. |
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| Authors: | Su Shi-Chen Lü You-Ming Mei Ting |
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| Institution: | Key Laboratory of Electroluminescent Devices, Department of Education of Guangdong Province, China Institute of Optoelectronic Material and Technology, South China Normal University, Guangzhou 510631, China;College of Materials Science and Engineering, Shenzhen University, Shenzhen 518060, China;Key Laboratory of Electroluminescent Devices, Department of Education of Guangdong Province, China Institute of Optoelectronic Material and Technology, South China Normal University, Guangzhou 510631, China |
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| Abstract: | The ZnO/Zn0.85Mg0.15O multiple quantum wells(MQWs)are fabricated on m-Al2O3 substrates by plasma-assisted molecular beam epitaxy (P-MBE) using a ZnMgO buffer layers. The reflection high-energy electron diffraction (RHEED) images indicate that the MQWs are of two-dimensional growth .The temperature dependent photoluminescence (PL) of the MQW also shows the quantum confine effect even at room temperature. The PL peak of 3nm MQW is 3.405 eV at 290 K.The PL spectrum in ZnO/Zn0.85Mg0.15O MQW is dominated by localized exciton emission at low temperatures, while the free exciton transition gradually dominates the spectrum at higher temperatures up to room temperature. The exciton binding energy in the 3 nm ZnO/Zn0.85Mg0.15O MQW is about 73 meV. |
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| Keywords: | ZnO multiplies quantum well P-MBE PL |
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