Generation and removal of adatom-induced electronic states on the Cs/GaAs(001) surface |
| |
| Authors: | A G Zhuravlev and V L Alperovich |
| |
| Institution: | (1) Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, pr. Akademika Lavrent’eva 13, Novosibirsk, 630090, Russia;(2) Novosibirsk State University, Novosibirsk, 630090, Russia |
| |
| Abstract: | A nonmonotonic behavior of band bending φ S as a function of cesium coverage ? on the Cs/GaAs(001) surface is observed in the form of several maxima and minima. This behavior indicates the formation of the quasi-discrete spectrum of the adatom-induced electronic surface states. The hysteresis of the φ S (?) dependence under adsorption and subsequent thermodesorption of cesium indicates the metastability of the Cs/GaAs(001) system. |
| |
| Keywords: | |
| 本文献已被 SpringerLink 等数据库收录！ |
|
