首页 | 本学科首页   官方微博 | 高级检索  
     


Hydrogen bonds and local symmetry in the crystal structure of gibbsite
Authors:Anastasia Vyalikh  Konrad Zesewitz  Ulrich Scheler
Affiliation:Leibniz Institute of Polymer Research Dresden, Hohe Str. 6, D‐01069 Dresden, Germany
Abstract:First‐principles quantum mechanical calculations of NMR chemical shifts and quadrupolar parameters have been carried out to assign the 27Al MAS NMR resonances in gibbsite. The 27Al NMR spectrum shows two signals for octahedral aluminum revealing two aluminum sites coordinated by six hydroxyl groups each, although the crystallographic positions of the two Al sites show little difference. The presence of two distinguished 27Al NMR resonances characterized by rather similar chemical shifts but quadrupolar coupling constants differing by roughly a factor of two is explained by different character of the hydrogen bonds, in which the hydroxyls forming the corresponding octahedron around each aluminum site, are involved. The Al‐I site characterized by a CQ = 4.6 MHz is surrounded by OH? groups participating in four intralayer and two interlayer hydrogen bonds, while the Al‐II site with the smaller quadrupolar constant (2.2 MHz) is coordinated by hydroxides, of which two point toward the intralayer cavities and four OH‐bonds are aligned toward the interlayer gallery. In high‐resolution solid‐state 1H CRAMPS (combination of rotation and multiple‐pulse spectroscopy) four signals with an intensity ratio of 1:2:2:1 are resolved which allow to distinguish six nonequivalent hydrogen sites reported in the gibbsite crystal structure and to ascribe them to two types of structural OH groups associated with intralayer and interlayer hydrogen bonds. This study can be applied to characterize the gibbsite‐like layer—intergallery interactions associated with hydrogen bonding in the more complex systems, such as synthetic aluminum layered double hydroxides. Copyright © 2010 John Wiley & Sons, Ltd.
Keywords:27Al solid‐state NMR  1H CRAMPS  CASTEP  gibbsite  hydrogen bonding
设为首页 | 免责声明 | 关于勤云 | 加入收藏

Copyright©北京勤云科技发展有限公司  京ICP备09084417号