N-type doping of GaN/Si(1 1 1) using Al0.2Ga0.8N/ALN composite buffer layer and Al0.2Ga0.8N/GaN superlattice |
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| Institution: | 1. Semiconductor Research Laboratory, Department of Electrical Engineering, Lakehead University, 955 Oliver Road, Thunder Bay, ON P7B 5E1, Canada;2. MEAglow Ltd., Box 398, 2400 Nipigon Road, Thunder Bay, ON P7C4W1, Canada;3. Institute of Solid State Physics, Bulgarian Academy of Sciences, 72 Tzarigradsko Chaussee Blvd., 1784 Sofia, Bulgaria;1. Research Center for Wide-Gap Semiconductors, State Key Laboratory for Artificial Microstructures and Mesoscopic Physics, School of Physics, Peking University, Beijing 100871, PR China;2. Sino Nitride Semiconductor CO., LTD, Dongguan 523500, PR China;1. Science School, Xi?an University of Technology, Xi?an 710048, Republic of China;2. School of automation and Information Engineering, Xi?an University of Technology, Xi?an 710048, Republic of China;1. Institute of Physics, Academy of Sciences of the Czech Republic, Cukrovarnicka 10, Praha 6, CZ 16253 Prague, Czech Republic;2. Slovak University of Technology, Faculty of Electrical Engineering and Information Technology, Institute of Electronics and Photonics, Ilkovi?ova 3, 812 19 Bratislava, Slovakia;1. Innovation Application Institute, Zhejiang Ocean University, Zhoushan, Zhejiang 316022, China;2. College of Electronic Information and Optical Engineering, Nankai University, Tianjin 300071, China |
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| Abstract: | The characteristics of Si-doped and undoped GaN/Si(1 1 1) heteroepitaxy with composite buffer layer (CBL) and superlattice are compared and discussed. While as-grown Si-doped GaN/Si(1 1 1) heteroepitaxy shows lower quality compared to undoped GaN, crack-free n-type and undoped GaN with the thickness of 1200 nm were obtained by metalorganic chemical vapor deposition (MOCVD). In order to achieve the crack-free GaN on Si(1 1 1), we have introduced the scheme of multiple buffer layers; composite buffer layer of Al0.2Ga0.8N/AlN and superlattice of Al0.2Ga0.8N/GaN on 2-in. Si(1 1 1) substrate, simultaneously. The FWHM values of the double-crystal X-ray diffractometry (DCXRD) rocking curves were 823 arcsec and 745 arcsec for n-GaN and undoped GaN/Si(1 1 1) heteroepitaxy, respectively. The average dislocation density on GaN surface was measured as 3.85×109 and 1.32×109 cm?2 for n-GaN and undoped GaN epitaxy by 2-D images of atomic force microscopy (AFM). Point analysis of photoluminescence (PL) spectra was performed for evaluating the optical properties of the GaN epitaxy. We also implemented PL mapping, which showed the distribution of edge emission peaks onto the 2 inch whole Si(1 1 1) wafers. The average FWHMs of the band edge emission peak was 367.1 and 367.0 nm related with 3.377 and 3.378 eV, respectively, using 325 nm He-Cd laser as an excitation source under room temperature. |
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