Highly reflective AlGaAsSb/InP Bragg reflector at 1.55 μm grown by MOVPE |
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| Institution: | 1. Department for Information Technology and Electrical Engineering, Swiss Federal Institute of Technology (ETH), Gloriastr. 35, 8092 Zürich, Switzerland;2. Physics Department, Institute for Quantum Electronics, ETH Zürich, Switzerland;3. LAAS-CNRS, 7 av. Colonel Roche, 31077 Toulouse, France;4. FIRST Center for Micro- and Nanoscience, ETH Zürich, Switzerland;5. Physics Department, Laboratory for Solid State Physics, ETH Zürich, Switzerland;1. Center for Materials and Microsystems, Fondazione Bruno Kessler, Via Sommarive 18, 38123 Povo, TN, Italy;2. Department of Physics, University of Trento, Via Sommarive 14, 38123 Trento, Italy;3. Department of Molecular Science and Nanosystems, Ca’Foscari University, Dorsoduro 2137, 30123 Venice, Italy;4. Ion Beam Centre, Advanced Technology Institute, University of Surrey, Guildford GU2 7XH, Surrey, England, United Kingdom;1. Department of Electro Technique, College of Electrical Engineering, Yadegar-e-Imam Khomeini (Rey) Shahre-rey Branch, Islamic Azad University, Tehran, Iran;2. Department of Electrical Engineering, Sharif University of Technology, Tehran, Iran;3. Department of Electrical Engineering, Karaj Branch, Islamic Azad University, Karaj, Iran;1. Natural Science Institute, Perm State University, Genkel 4, 614990 Perm, Russia;2. Department of Physical Chemistry, Perm State University, Bukirev 15, 614990 Perm, Russia;3. Department of Solid State Physics, Perm State University, Bukirev 15, 614990 Perm, Russia;4. Institute of Continuous Media Mechanics, Ural Branch of RAS, Academ. Korolev St. 1, 614013 Perm, Russia;1. INNANOMAT group, Departamento de Ciencia de los Materiales e I. M. y Q. I., Instituto Universitario de Investigación en Microscopía Electrónica y Materiales (IMEYMAT), CEI·MAR, Universidad de Cádiz, 11510 Puerto Real, Cádiz, Spain;2. U.S Naval Research Laboratory, 4555 Overlook Ave. SW, Washington D.C. 20375, USA;3. Sotera Defense Solutions, 430 National Business Pkwy # 100, Annapolis Junction, MD 20701, USA;4. Intelligent Epitaxy Technology, Inc. Richardson, TX, 75801, USA;5. Rochester Institute of Technology, 85 Lomb Memorial Drive, Rochester, NY 14623, USA;1. IES, Univ. Montpellier, CNRS, F-34000 Montpellier, France;2. LTM, Univ. Grenoble Alpes, CNRS, F-38000 Grenoble, France |
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| Abstract: | The metalorganic vapor-phase epitaxy growth of a highly reflective 24-pair AlGaAsSb/InP-distributed Bragg reflector (DBR) is reported for the first time. The influence of the growth parameters such as the V/III input ratio, the growth temperature and the pressure, the total H2 flow, the gas velocity and the switching sequence of the source gases at the interfaces has been deeply investigated and optimized to achieve stable growth conditions. The DBR achieves a reflectivity as high as 99.5% around 1.55 μm, a uniform stable composition, and an excellent crystal quality over the 2 inch wafer, with a surface free of crosshatch and a defect density below 1/cm2. For the optical characterizations, measurements of linear and nonlinear reflectivity, transmission, pump-probe and photoluminescence were done. The interfaces and bulk layers of InP/AlGaAsSb/InP heterostructures were analyzed by transmission electron microscopy. High resolution X-ray diffraction measurements were used to determine the composition shift in the growth plane of the DBR. The measurements show the high quality of the growth and demonstrate that thick AlGaAsSb/InP heterostructures can be grown by metalorganic vapor-phase epitaxy (MOVPE), and in particular DBRs above 1.31 μm. |
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