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Photoluminescence properties of erbium-doped structures of silicon nanocrystals in silicon dioxide matrix |
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| Institution: | 1. Moscow State M. V. Lomonosov University, Physics Department, Leninskie Gory 1, 119992 Moscow, Russia;2. Max-Planck-Institut für Mikrostrukturphysik, Experimental Department II, Weinberg 2, Halle, Germany;3. Kobe University, Department of Electrical and Electronics Engineering, Kobe, Japan;1. Materials Science Department, FCT-UNL, Campus da Caparica, Portugal;2. INESC Microsistemas e Nanotecnologias, Lisbon, Portugal;3. Department of Chemical and Biological Engineering, IST-UTL, Lisbon, Portugal |
| Abstract: | We present a study of the photoluminescence (PL) of structures of Si nanocrystals (nc-Si) in erbium-doped amorphous silicon dioxide. It is shown that the energy of excitons confined in nc-Si of 2–5 nm sizes is efficiently transferred to Er3+ ions in surrounding SiO2 and a strong PL line at 1.5 μm appears. At high excitation intensity the population inversion of Er3+ ion states is achieved. These results demonstrate good perspectives of Er-doped nc-Si/SiO2 structures for possible applications in Si-based optical amplifiers and lasers. |
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