Seeded growth of AlN on N- and Al-polar 〈0001〉 AlN seeds by physical vapor transport |
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| Institution: | 1. Center for Compound Semiconductors and School of Electrical and Computer Engineering, Georgia Institute of Technology, 777 Atlantic Dr. NW, Atlanta, GA 30332, USA;2. Department of Physics, Arizona State University, Tempe, AZ 85287, USA;3. School of Materials Science and Engineering, Georgia Institute of Technology, 777 Atlantic Dr. NW, Atlanta, GA 30332, USA;1. State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033, People''s Republic of China;2. State Key Laboratory of Applied Optics, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033, People''s Republic of China;3. University of Chinese Academy of Sciences, Beijing 100039, People''s Republic of China;1. Suzhou Institute of Nano-tech and Nano-bionics, CAS, Ruoshui Road 398, Suzhou Industrial Park, Suzhou 215123, China;2. School of Physical Science and Technology, ShanghaiTech University, Shanghai 201210, China;3. Shenyang National Laboratory for Materials Science, Jiangsu Institute of Advanced Semiconductors, NW-20, Nanopolis Suzhou, 99, Jinji Lake Avenue, Suzhou Industrial Park, Jiangsu Province, China;4. Jiangsu Key Laboratory of Micro and Nano Heat Fluid Flow Technology and Energy Application, School of Physical Science and Technology, Suzhou University of Science and Technology, Suzhou 215009, People’s Republic of China;5. Suzhou Nanowin Science and Technology Co. Ltd., Suzhou 215123, China;1. Graduate School of Engineering, Mie University, 1577 Kurimamachiya, Tsu, Mie 514-8507, Japan;2. Strategic Planning Office for Regional Revitalization, Mie University, 1577 Kurimamachiya, Tsu, Mie 514-8507, Japan;3. Graduate School of Regional Innovation Studies, Mie University, 1577 Kurimamachiya, Tsu, Mie 514-8507, Japan |
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| Abstract: | We demonstrated seeded growth of AlN on large-area Al- and N-polar <0 0 0 1>-oriented AlN seeds using the physical vapor transport method (PVT). In both cases, crystals having a diameter of 15 mm were obtained from 5 mm seeds. Based on growth step and terrace width analyses, it was found that the N-polar face was suitable for growth within a large window of growth parameters while the Al-polar seeds yielded high-quality crystals only at low supersaturation. |
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