| 表面InGaN厚度对GaN基发光二极管特性的影响 |
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| 引用本文： | 顾晓玲,郭霞,吴迪,李一博,沈光地.表面InGaN厚度对GaN基发光二极管特性的影响[J].物理学报,2008,57(2):1220-1223. |
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| 作者姓名： | 顾晓玲 郭霞 吴迪 李一博 沈光地 |
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| 作者单位： | 北京工业大学，北京市光电子技术实验室，北京 100022 |
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| 基金项目： | 国家重点基础研究发展规划(批准号：2006CB604902),国家自然科学基金(批准号：60506012),国家高技术研究发展计划(批准号：2006AA03A121)和北京市优秀人才强教计划(批准号：20051D0501502)资助的课题. |
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| 摘 要： | 通过调整GaN基发光二极管(LED)表面InGaN层的厚度，发现在20 mA电流驱动下，LED器件的正向压降有明显差距.本文考虑了极化效应的影响，通过求解InGaN/GaN三角形势阱内二维空穴气浓度以及空穴隧穿概率的变化，求得了表面InGaN层厚度不同时器件正向压降的变化趋势，发现理论结果与实验结果有很好的吻合.同时得到了获得最低正向压降的表面InGaN厚度.
关键词：
极化
二维空穴气
隧穿概率
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| 关 键 词： | 极化 二维空穴气 隧穿概率 |
| 文章编号： | 1000-3290/2008/57(02)/1220-04 |
| 收稿时间： | 2007-04-10 |
| 修稿时间： | 2007-06-18 |
Dependence of properties of GaN-based light emitting diodes on the surface InGaN thickness |
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| Gu Xiao-Ling,Guo Xia,Wu Di,Li Yi-Bo,Shen Guang-Di.Dependence of properties of GaN-based light emitting diodes on the surface InGaN thickness[J].Acta Physica Sinica,2008,57(2):1220-1223. |
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| Authors: | Gu Xiao-Ling Guo Xia Wu Di Li Yi-Bo Shen Guang-Di |
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| Abstract: | GaN-based light emitting diodes (LEDs) with InGaN as the capping layer was designed in our experiment. The forward voltage at the typical driving current of 20mA was obviously changed by adjusting the thickness of the InGaN layer. We were concerned with the effect of polarization and solved the concentration and the tunneling probability of the two dimensional hole in the triangular potential well at the surface InGaN/GaN interface and obtained the minimal forward voltage. The calculation results were consistent with the experimental data. |
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| Keywords: | polarization two dimension hole concentration tunneling probability |
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