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Effect of dispersion on the phonon focusing and anisotropy of thermal conductivity of silicon single crystals in the boundary scattering regime
Authors:I I Kuleyev  I G Kuleyev  S M Bakharev  A V Inyushkin
Institution:1699. Institute of Metal Physics, Ural Branch of the Russian Academy of Sciences, ul. Sofii Kovalevskoi 18, Yekaterinburg, 620990, Russia
2699. National Research Centre “Kurchatov Institute,”, pl. Akademika Kurchatova 1, Moscow, 123182, Russia
Abstract:The effect of dispersion on the focusing of thermal phonons and on the thermal conductivity of silicon single crystals in the boundary scattering regime has been investigated. Analysis of the spectra of acoustic modes obtained for silicon single crystals from inelastic neutron scattering data has demonstrated that, upon transition from long-wavelength phonons to short-wavelength phonons, the directions of their focusing change. With an increase in temperature, this leads to a change in the anisotropy of thermal conductivity of phonons with different polarizations and, consequently, to a change in the anisotropy of the total thermal conductivity. Analysis of the temperature dependence of the thermal conductivity has revealed that the presence of extended flattened sections in the spectrum of short-wavelength transverse phonons indicates anomalously low values of the group velocity and, accordingly, a significant decrease in the contribution from these phonons to the thermal conductivity with increasing temperature. The contribution from longitudinal phonons to the thermal conductivity also significantly increases even at temperatures higher than 110 K and becomes dominant.
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