Studies on CdTe films deposited by pulsed laser deposition technique |
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Authors: | B. Ghosh S. HussainR. Bhar A.K. Pal |
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Affiliation: | Department of Instrumentation Science, USIC Building, Jadavpur University, Calcutta 700 032, India |
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Abstract: | Polycrystalline cadmium telluride films were successfully deposited on glass substrates by ablating a CdTe target by pulsed Nd–YAG laser. Microstructural studies indicated an increase in the average crystallite size from 15 nm to ∼50 nm with the increase in substrate temperature during deposition. The films deposited here were slightly tellurium rich. X-ray diffraction pattern indicated that the films deposited at 300 K had wurtzite structure while those deposited above 573 K were predominantly of zinc blende structure. Residual strain in the films deposited at 300 K was quite low as compared to those deposited at higher temperatures. PL spectra of all the CdTe films were dominated by a strong peak at ∼921 nm (∼1.347 eV) followed by a low intensity peak at ∼863 nm (∼1.438 eV). Characteristics Raman peaks for CdTe indicated a peak at ∼120 cm−1 followed by peaks located at ∼140 cm−1 and 160 cm−1. |
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Keywords: | CdTe Photoluminescence PLD |
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