| Effect of nonstoichiometry on Raman scattering of VO2 films |
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| 引用本文： | 袁宏韬,冯克成,王学进,李超,何琛娟,聂玉昕. Effect of nonstoichiometry on Raman scattering of VO2 films[J]. 中国物理, 2004, 13(1): 82-84 |
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| 作者姓名： | 袁宏韬 冯克成 王学进 李超 何琛娟 聂玉昕 |
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| 作者单位： | Changchun University of Science and Technology, Changchun 130022, China; Institute of Physics ,Chinese Academy of Sciences, Beijing 100080, China;Changchun University of Science and Technology, Changchun 130022, China;Institute of Physics ,Chinese Academy of Sciences, Beijing 100080, China;Changchun University of Science and Technology, Changchun 130022, China;Institute of Physics ,Chinese Academy of Sciences, Beijing 100080, China;Institute of Physics ,Chinese Academy of Sciences, Beijing 100080, China |
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| 基金项目： | Project supported by the National Natural Science Foundation of China (Grant No 50072045), and the Foundation of Center for Condensed Matter Physics. |
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| 摘 要： | We report on Raman scattering of VO2 films prepared by radio frequency magnetron sputtering under different conditions. Our investigations revealed that the dominated Raman peaks shift towards high frequency for both V-rich and O-rich VO2 films, compared with the stoichiometry VO2 films. The experimental evidence is presented and the cause for nonstoichiometry dependence of Raman spectra of VO2 films is discussed.
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| 关 键 词： | 拉曼光谱 二氧化钒薄膜 拉曼散射 RF磁控溅射 非化学计量 薄膜光谱 |
| 收稿时间： | 2003-06-04 |
Effect of nonstoichiometry on Raman scattering of VO2 films |
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| Yuan Hong-Tao,Feng Ke-Cheng,Wang Xue-Jin,Li Chao,He Chen-Juan and Nie Yu-Xin. Effect of nonstoichiometry on Raman scattering of VO2 films[J]. Chinese Physics, 2004, 13(1): 82-84 |
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| Authors: | Yuan Hong-Tao Feng Ke-Cheng Wang Xue-Jin Li Chao He Chen-Juan Nie Yu-Xin |
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| Affiliation: | Changchun University of Science and Technology, Changchun 130022, China; Changchun University of Science and Technology, Changchun 130022, China; Institute of Physics ,Chinese Academy of Sciences, Beijing 100080, China; Institute of Physics ,Chinese Academy of Sciences, Beijing 100080, China |
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| Abstract: | We report on Raman scattering of VO_2 films prepared by radio frequency magnetron sputtering under different conditions. Our investigations revealed that the dominated Raman peaks shift towards high frequency for both V-rich and O-rich VO_2 films, compared with the stoichiometry VO_2 films. The experimental evidence is presented and the cause for nonstoichiometry dependence of Raman spectra of VO_2 films is discussed. |
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| Keywords: | vanadium dioxide thin films Raman spectra nonstoichiometry RF magnetron sputtering |
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