| Effect of nonstoichiometry on Raman scattering of VO2 films |
| |
| 作者姓名： | 袁宏韬 冯克成 王学进 李超 何琛娟 聂玉昕 |
| |
| 作者单位： | Changchun University of Science and Technology, Changchun 130022, China; Institute of Physics ,Chinese Academy of Sciences, Beijing 100080, China;Changchun University of Science and Technology, Changchun 130022, China;Institute of Physics ,Chinese Academy of Sciences, Beijing 100080, China;Changchun University of Science and Technology, Changchun 130022, China;Institute of Physics ,Chinese Academy of Sciences, Beijing 100080, China;Institute of Physics ,Chinese Academy of Sciences, Beijing 100080, China |
| |
| 基金项目： | Project supported by the National Natural Science Foundation of China (Grant No 50072045), and the Foundation of Center for Condensed Matter Physics. |
| |
| 摘 要： | We report on Raman scattering of VO2 films prepared by radio frequency magnetron sputtering under different conditions. Our investigations revealed that the dominated Raman peaks shift towards high frequency for both V-rich and O-rich VO2 films, compared with the stoichiometry VO2 films. The experimental evidence is presented and the cause for nonstoichiometry dependence of Raman spectra of VO2 films is discussed.
|
| 关 键 词： | 拉曼光谱 二氧化钒薄膜 拉曼散射 RF磁控溅射 非化学计量 薄膜光谱 |
| 收稿时间： | 6/4/2003 12:00:00 AM |
Effect of nonstoichiometry on Raman scattering of VO2 films |
| |
| Yuan Hong-Tao,Feng Ke-Cheng,Wang Xue-Jin,Li Chao,He Chen-Juan and Nie Yu-Xin.Effect of nonstoichiometry on Raman scattering of VO2 films[J].Chinese Physics B,2004,13(1):82-84. |
| |
| Authors: | Yuan Hong-Tao Feng Ke-Cheng Wang Xue-Jin Li Chao He Chen-Juan and Nie Yu-Xin |
| |
| Institution: | Changchun University of Science and Technology, Changchun 130022, China; Changchun University of Science and Technology, Changchun 130022, China; Institute of Physics ,Chinese Academy of Sciences, Beijing 100080, China; Institute of Physics ,Chinese Academy of Sciences, Beijing 100080, China |
| |
| Abstract: | We report on Raman scattering of VO_2 films prepared by radio frequency magnetron sputtering under different conditions. Our investigations revealed that the dominated Raman peaks shift towards high frequency for both V-rich and O-rich VO_2 films, compared with the stoichiometry VO_2 films. The experimental evidence is presented and the cause for nonstoichiometry dependence of Raman spectra of VO_2 films is discussed. |
| |
| Keywords: | vanadium dioxide thin films Raman spectra nonstoichiometry RF magnetron sputtering |
| 本文献已被 维普 等数据库收录！ |
| 点击此处可从《中国物理 B》浏览原始摘要信息 |
| 点击此处可从《中国物理 B》下载免费的PDF全文 |
|
