Temperature dependence of photodegradation in amorphous hydrogenated silicon |
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| Authors: | Y. M. Sun W. Krühler C. E. Nebel G. H. Bauer |
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| Affiliation: | (1) Siemens Research Laboratories, D-8000 München 83, Fed. Rep. Germany;(2) Institut für Physikalische Elektronik, Universität, D-7000 Stuttgart 70, Fed. Rep. Germany |
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| Abstract: | Measurements of steady-state photoconductivity with respect to light-induced defect generation in amorphous hydrogenated silicon (a-Si: H) show that the power index of the time evolution (long-term observation) of the photodegradation is determined by the exposure temperature and the material. |
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| Keywords: | 73.60 85.30 |
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