| Enhancement of Photoluminescence Intensity of GaInNAs/GaAs Quantum Wells by Two-Step Rapid Thermal Annealing |
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| 作者姓名： | 赵欢 徐应强 倪海桥 韩勤 吴荣汉 牛智川 |
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| 作者单位： | State Key Laboratory for Superlattice and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, PO Box 912, Beijing 100083 |
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| 基金项目： | Supported by the National Natural Science Foundation of China under Grant No 90201026, the National High Technology Research and Development Programme of China, the Special Funds for Major State Basic Research Project, and Post-doctoral Science Foundation of China. |
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| 摘 要： |
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| 关 键 词： | 光致发光 量子阱 热退化 材料品质 |
| 收稿时间： | 2006-01-09 |
| 修稿时间： | 2006-01-09 |
Enhancement of Photoluminescence Intensity of GaInNAs/GaAs Quantum Wells by Two-Step Rapid Thermal Annealing |
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| ZHAO Huan, XU Ying-Qiang, NI Hai-Qiao, HAN Qin, WU Rong-Han, NIU Zhi-Chuan.Enhancement of Photoluminescence Intensity of GaInNAs/GaAs Quantum Wells by Two-Step Rapid Thermal Annealing[J].Chinese Physics Letters,2006,23(9):2579-2582. |
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| Authors: | ZHAO Huan XU Ying-Qiang NI Hai-Qiao HAN Qin WU Rong-Han NIU Zhi-Chuan |
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| Institution: | State Key Laboratory for Superlattice and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, PO Box 912, Beijing 100083 |
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| Abstract: | We investigate the effect of rapid thermal annealing on InGaNAs/GaAs quantum wells. At optimized annealing temperatures and times, the greatest enhancement of the photoluminescence intensity is obtained by a special two-step annealing process. To identify the mechanism affecting the material quality during the rapid thermal annealing, differential temperature analysis is applied, and temperature- and power-dependent photoluminescence is carried out on the samples annealed under different conditions. Our experiment reveals that some composition redistribution or other related ordering processes may occur in the quantum-well layer during annealing. Annealing at a lower temperature for a long time primarily can remove defects and dislocations while annealing at a higher temperature for a short time primarily homogenizes the composition in the quantum wells. |
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