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Influence of injection current and temperature on electroluminescence in InGaN/GaN multiple quantum wells |
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| Institution: | 1. School of Physics, Shandong University, Jinan 250100, China;2. State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, China;1. State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Science, Beijing 100083, China;2. University of Chinese Academy of Sciences, Beijing 100049, China;3. Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences, Suzhou 215123, China;4. Microsystem & Terahertz Research Center, Chinese Academy of Engineering Physics, Chengdu 610200, China;1. Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing 210093, China;2. College of Optoelectronics Engineering, Zaozhuang University, Zaozhuang 277160, China;1. Laboratoire des Micro-Optoélectroniques et Nanostructures, Université de Monastir, Faculté des Sciences de Monastir, Avenue de l’Environnement 5019 Monastir, Tunisia;2. Laboratoire Multimatériaux et Interfaces, Université Claude Bernard Lyon 143, Boulevard du 11 Novembre 1918, France |
| Abstract: | Electroluminescence (EL) spectra of blue InGaN/GaN multiple-quantum-well light-emitting diode (LED) have been investigated over a wide range of injection current (0.001–200 mA) and at various temperatures (6–300 K). Surprisingly, with increasing the injection current the EL peak energy shows an initial blueshift accompanied by a broadening of the EL linewidth at low temperatures (below 30 K). This trend differs from the usual photoluminescence (PL) measurement results, which have shown that with increasing the optical excitation power the PL peak energy gave an initial blueshift accompanied by a narrowing of the PL linewidth at low temperatures. The anomalous current behavior of the EL spectra may be attributed to electron leakage results in the failure of Coulomb screening effect and the relative enhancement of the low-energetic localized state filling at low temperatures and low currents. The electron leakage for the LED is further confirmed by both the current dependence of the EL intensity and the temperature dependence of the EL efficiency. |
| Keywords: | InGaN/GaN multiple-quantum-well Light-emitting diode Current–voltage characteristics Electroluminescence Electron leakage |
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