低位错密度4 inch GaSb(100)单晶生长及高质量衬底制备

采用液封直拉法(LEC)生长了4 inch直径(100)GaSb单晶并进行了衬底晶片的加工制备.通过优化热场,可重复生长出非掺和掺Te 整锭(100)单晶,单晶锭的重量为5~8 kg, 成晶率可达80;以上.4 inch(100)晶片大部分区域的位错腐蚀坑密度小500 cm-2,其(004)双晶衍射峰的半峰宽为29弧秒,表明晶片衬底的完整性相当好.晶体生长过程中固液界面较为平坦,因而晶片表现出良好的横向电学均匀性.经研磨和机械化学抛光,制备出具备良好平整度和表面粗糙度的开盒即用衬底晶片.通过控制本征受主缺陷浓度和掺杂浓度,制备出具有良好近红外透光率的n型GaSb单晶衬底.

Growth of 4 inch Diameter GaSb (100) Single Crystal with Low Dislocation Density and High Quality Substrate Preparation

Undoped and Te-doped 4 inch diameter (100) GaSb single crystals in 5-8 kg weight have been grown by using liquid encapsulated Czochralski (LEC) and substrate wafer have been prepared.By optimizing the thermal field, single crystal yield as high as 80% have been achieved.Dislocation etch pit density (EPD) of the wafer is less than 500 cm-2 and its X-ray diffraction rocking curves has a full width at half maximum (FWHM) around 29 arcse, indicating a high lattice perfection.The wafer has good electrical uniformity, benefiting from the flat solid-liquid interface during the single crystal growth process.Epi-ready 4 inch GaSb substrate wafer with good flatness and low surface roughness has been prepared.N type GaSb wafer with good near infrared transmittance has been prepared by controlling the native acceptor concentration and doping concentration.