| 使用AlN/GaN超晶格势垒层生长高Al组分AlGaN/GaN HEMT结构 |
| |
| 引用本文： | 丁国建,郭丽伟,邢志刚,陈耀,徐培强,贾海强,周均铭,陈弘.使用AlN/GaN超晶格势垒层生长高Al组分AlGaN/GaN HEMT结构[J].物理学报,2010,59(8):5724-5729. |
| |
| 作者姓名： | 丁国建 郭丽伟 邢志刚 陈耀 徐培强 贾海强 周均铭 陈弘 |
| |
| 作者单位： | 北京凝聚态物理国家实验室,中国科学院物理研究所清洁能源实验室,北京 100190 |
| |
| 基金项目： | 国家自然科学基金(批准号: 10574148), 国家重点基础研究发展计划(批准号: 2006CB921300), 国家高技术研究发展计划(批准号: 2006AA03A106, 2006AA03A107)资助的课题. |
| |
| 摘 要： | 在蓝宝石衬底上生长了以AlN/GaN超晶格准AlGaN合金作为势垒的HEMT结构材料,并与传统AlGaN合金势垒样品进行了对比.在高Al组分(≥40%)情况下,超晶格势垒样品的表面形貌明显改进,电学性能特别是2DEG面电子浓度也有所改进.对超晶格势垒生长参数进行了初步优化,使得HEMT结构薄层电阻进一步降低,最后获得了251 Ω/□的薄层电阻.
关键词：
AlGaN/GaN 结构
AlN/GaN超晶格
二维电子气
高电子迁移率晶体管
|
| 关 键 词： | AlGaN/GaN 结构 AlN/GaN超晶格 二维电子气 高电子迁移率晶体管 |
| 收稿时间： | 2009-12-08 |
Growth and character stics of AlGaN/GaN HEMT structures with AlN/GaN superlattices as barrier layers |
| |
| Ding Guo-Jian,Guo Li-Wei,Xing Zhi-Gang,Chen Yao,Xu Pei-Qiang,Jia Hai-Qiang,Zhou Jun-Ming,Chen Hong.Growth and character stics of AlGaN/GaN HEMT structures with AlN/GaN superlattices as barrier layers[J].Acta Physica Sinica,2010,59(8):5724-5729. |
| |
| Authors: | Ding Guo-Jian Guo Li-Wei Xing Zhi-Gang Chen Yao Xu Pei-Qiang Jia Hai-Qiang Zhou Jun-Ming Chen Hong |
| |
| Institution: | Beijing National Laboratory of Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China;Beijing National Laboratory of Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China;Beijing National Laboratory of Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China;Beijing National Laboratory of Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China;Beijing National Laboratory of Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China;Beijing National Laboratory of Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China;Beijing National Laboratory of Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China;Beijing National Laboratory of Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China |
| |
| Abstract: | We report the growth and characterization of AlGaN/GaN heterostructures with AlN/GaN superlattices as the barrier layer.It is found that the surface morphology of the heterostructure is greatly improved compared with those using the conventional alloy AlGaN barrier layer.Meanwhile, electric properties of samples with high Al composition (≥40%) are superior to the conventional alloy sanples.Low sheet resistance (251 Ω/□) is obtained for our samples with 40% Al content. |
| |
| Keywords: | AlGaN/GaN heterostructure AlN/GaN superlattices two dimensional electron gas high electron mobility transistor |
| 本文献已被 万方数据 等数据库收录！ |
| 点击此处可从《物理学报》浏览原始摘要信息 |
| 点击此处可从《物理学报》下载免费的PDF全文 |
|
