Role of a‐Si:H bulk in surface passivation of c‐Si wafers |
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| Authors: | A. Illiberi K. Sharma M. Creatore M. C. M. van de Sanden |
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| Affiliation: | Department of Applied Physics, Eindhoven University of Technology, P.O. Box 513, 5600 MB Eindhoven, The Netherlands |
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| Abstract: | The low thermal stability of hydrogenated amorphous silicon (a‐Si:H) thin films limits their widespread use for surface passivation of c‐Si wafers on the rear side of solar cells. We show that the thermal stability of a‐Si:H surface passivation is increased significantly by a hydrogen rich a‐Si:H bulk, which acts as a hydrogen reservoir for the a‐Si:H/c‐Si interface. Based on this mechanism, an excellent lifetime of 5.1 ms (at injection level of 1015 cm–3) is achieved after annealing at 450 °C for 10 min. (© 2010 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim) |
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| Keywords: | solar cells silicon hydrogen passivation carrier recombination |
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