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Enhanced surface sensitivity in secondary ion mass spectrometric analysis of organic thin films using size‐selected Ar gas‐cluster ion projectiles
Authors:Motohiro Tanaka  Kousuke Moritani  Tomokazu Hirota  Noriaki Toyoda  Isao Yamada  Norio Inui  Kozo Mochiji
Affiliation:1. Department of Mechanical and System Engineering, Graduate School of Engineering, University of Hyogo, 2167 Shosha, Himeji, Hyogo 671‐2201, Japan;2. Incubation Center, Graduate School of Engineering, University of Hyogo, 2167 Shosha, Himeji, Hyogo, 671‐2201, Japan
Abstract:A size‐selected argon (Ar) gas‐cluster ion beam (GCIB) was applied to the secondary ion mass spectrometry (SIMS) of a 1,4‐didodecylbenzene (DDB) thin film. The samples were also analyzed by SIMS using an atomic Ar+ ion projectile and X‐ray photoelectron spectroscopy (XPS). Compared with those in the atomic‐Ar+ SIMS spectrum, the fragment species, including siloxane contaminants present on the sample surface, were enhanced several hundred times in the Ar gas‐cluster SIMS spectrum. XPS spectra during beam irradiation indicate that the Ar GCIB sputters contaminants on the surface more effectively than the atomic Ar+ ion beam. These results indicate that a large gas‐cluster projectile can sputter a much shallower volume of organic material than small projectiles, resulting in an extremely surface‐sensitive analysis of organic thin films. Copyright © 2010 John Wiley & Sons, Ltd.
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