Temperature dependence of the radiation-stimulated conductivity of CsI crystals upon picosecond excitation by electron beams |
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Authors: | B P Aduev É D Aluker V M Fomchenko V N Shvayko |
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Institution: | (1) Kemerovo State University, ul. Krasnaya 6, Kemerovo, 650043, Russia |
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Abstract: | The temperature dependence of the pulse conductivity for CsI crystals upon excitation with an electron beam (0.2 MeV, 50 ps, 400 A/cm2) at a time resolution of 150 ps is investigated. Under experimental conditions, the time of bimolecular recombination of electrons and holes (V k centers) is directly measured in the temperature range 100–300 K. This made it possible to calculate the temperature dependence of the effective recombination cross section S(T)=7.9×10?8 T2 cm2. The temperature dependence of the conductivity σ(T) is interpreted within the model of the separation of genetically bound electron-hole pairs. The activation energy of this process is found to be E G =0.07 eV. |
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