Highly stable amorphous indium‐zinc‐oxide thin‐film transistors with back‐channel wet‐etch process |
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| Authors: | Dongxiang Luo Min Li Miao Xu Jiawei Pang Yanli Zhang Lang Wang Hong Tao Lei Wang Jianhua Zou Junbiao Peng |
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| Affiliation: | 1. Institute of Polymer Optoelectronic Materials and Devices, South China University of Technology, Guangzhou 510640, P.R. China;2. State Key Laboratory of Luminescent Materials and Devices, Guangzhou 510640, P.R. China;3. School of Electronic and Information Engineering, South China University of Technology, Guangzhou 510640, P.R. China;4. Guangzhou New Vision Optoelectronic Co., Ltd., Guangzhou 510530, P.R. China;5. Guangzhou New Vision Optoelectronic Co., Ltd., Guangzhou 510530, P.R. ChinaPhone: +86 20 87114567 |
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| Abstract: | ![]()
The stabilities of amorphous indium‐zinc‐oxide (IZO) thin film transistors (TFTs) with back‐channel‐etch (BCE) structure are investigated. A molybdenum (Mo) source/drain electrode was deposited on an IZO layer and patterned by hydrogen peroxide (H2O2)‐based etchants. Then, after etching the Mo layer, SF6 plasma with direct plasma mode was employed and optimized to improve the bias stress stability. Scanning electron microscopy and X‐ray photoelectron spectroscopic analysis revealed that the etching residues were removed efficiently by the plasma treatment. The modified BCE‐ TFTs showed only threshold voltage shifts of 0.25 V and –0.20 V under positive/negative bias thermal stress (P/NBTS, VGS = ±30 V, VDS = 0 V and T = 60 °C) after 12 hours, respectively. (© 2014 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim) |
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| Keywords: | thin‐film transistors amorphous materials indium zinc oxide etching |
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