In–Ga–Zn–O MESFET with transparent amorphous Ru–Si–O Schottky barrier |
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| Authors: | Jakub Kaczmarski Jakub Grochowski Eliana Kaminska Andrzej Taube Wojciech Jung Anna Piotrowska |
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| Institution: | 1. Institute of Electron Technology, Al. Lotnikow 32/46, 02‐668 Warsaw, Poland;2. Institute of Microelectronics and Optoelectronics, Warsaw University of Technology, Koszykowa 75, 00‐662 Warsaw, Poland;3. Institute of Electron Technology, Al. Lotnikow 32/46, 02‐668 Warsaw, PolandPhone: +48 22 5487942 |
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| Abstract: | Rectifying transparent amorphous Ru–Si–O Schottky contacts to In–Ga–Zn–O have been fabricated by means of reactive sputtering without any annealing processes nor semiconductor surface treatments. The ideality factor, effective Schottky barrier height and rectification ratio are equal to 1.6, 0.9 eV and 105 A/A, respectively. Ru–Si–O/In–Ga–Zn–O Schottky barriers were employed as gate electrodes for In–Ga–Zn–O metal–semiconductor field‐effect transistors (MESFETs). MESFET devices exhibiting on‐to‐off current ratio at the level of 103 A/A in a voltage range of 2 V, with subthreshold swing equal to 420 mV/dec were demonstrated. A channel mobility of 7.36 cm2/V s was achieved. (© 2014 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim) |
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| Keywords: | In− Ga− Zn− O Schottky barriers metal− semiconductor field‐effect transistors amorphous oxide semiconductors transparent electronics |
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