Wire metamaterial based on semiconductor matrices |
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| Authors: | A Atrashchenko A Nashchekin M Mitrofanov V P Ulin V P Evtikhiev |
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| Institution: | 1. Ioffe Physical‐Technical Institute of the Russian Academy of Sciences, St. Petersburg 194021, Russia;2. National Research University of Information Technologies, Mechanics, and Optics (ITMO), St. Petersburg 197101, Russia |
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| Abstract: | In this Letter, we have presented a new approach for the fabrication of nanowire media (wire metamaterials) by electrochemical methods. AIIIBV porous matrices (a host medium) were prepared by anodic electrochemical etching of industrial substrates. The host medium has been filled via electrochemical deposition with a metal and by means of annealing process. We have shown that this technique can be used to fabricate a nanowire medium with unique parameters (such as aspect ratio, high electric permittivity and strong χ(3) nonlinearity near the fundamental absorption edge of the host media). (© 2014 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim) |
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| Keywords: | wire metamaterials nanocomposites semiconductor matrices Cu nanowires electrochemical etching |
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