The unoccupied electronic structure characterization of hydrothermally grown ThO2 single crystals |
| |
| Authors: | T D Kelly J C Petrosky D Turner J W McClory J M Mann J W Kolis Xin Zhang P A Dowben |
| |
| Institution: | 1. Department of Engineering Physics, Air Force Institute of Technology, 2950 Hobson Way, WPAFB, OH 45433, USA;2. Oak Ridge Institute for Science and Education, 1299 Bethel Valley Road, Oak Ridge, TN 37830, USA;3. Sensors Directorate, Air Force Research Laboratory, Wright‐Patterson AFB, OH 45433, USA;4. Department of Chemistry and Center for Optical Materials Science and Engineering Technologies (COMSET), Clemson University, Clemson, SC 29634‐0973, USA;5. Department of Physics and Astronomy, Theodore Jorgensen Hall, 855 North 16th Street, University of Nebraska‐Lincoln, Lincoln, NE 68588‐0299, USA |
| |
| Abstract: | Single crystals of thorium dioxide ThO2, grown by the hydrothermal growth technique, have been investigated by ultraviolet photoemission spectroscopy (UPS), inverse photoemission spectroscopy (IPES), and L3, M3, M4, and M5 X‐ray absorption near edge spectroscopy (XANES). The experimental band gap for large single crystals has been determined to be 6 eV to 7 eV, from UPS and IPES, in line with expectations. The combined UPS and IPES, place the Fermi level near the conduction band minimum, making these crystals n‐type, with extensive band tailing, suggesting an optical gap in the region of 4.8 eV for excitations from occupied to unoccupied edge states. Hybridization between the Th 6d/5f bands with O 2p is strongly implicated. (© 2014 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim) |
| |
| Keywords: | electronic properties ThO2 photoemission inverse photoemission X‐ray absorption near edge spectroscopy |
|
|
