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Light-induced absorption change in Fe-doped GaN
Authors:R Fujimura  S Kitazaki  T Shimura  K Kuroda
Institution:Institute of Industrial Science, The University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo 153-8505, Japan
Abstract:The properties of a light-induced absorption (LIA) change were investigated in a semi-insulating Fe-doped GaN crystal. The temporal profile and a spectrum of the LIA were measured in the temperature range from 15 K to 300 K. The LIA was almost proportional to the light intensity and showed slight saturation behavior. The relaxation time constant, in the range of milliseconds, was equal to the lifetime of infrared photoluminescence related to the Fe3+ internal transition Fe3+(4T1)→Fe3+(6A1). The LIA was attributed to an excited-state absorption from Fe3+(4T1). Some of the peak energies observed in the LIA spectrum showed good agreement with transition energies expected from an energy diagram of Fe-doped GaN crystal.
Keywords:78  40  Fy  71  55  Eq
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