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Diode-pumped passively Q-switched Nd:LuVO4 laser at 916 nm |
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| Authors: | Kunna He Chunqing Gao Dehua Li HuaiJin Zhang |
| Affiliation: | a Department of Opto-Electronics, Beijing Institute of Technology, Beijing 100081, China b Laboratory of Optical Physics, Institute of Physics, Chinese Academy of Sciences, P.O. Box 603, Beijing 100190, China c National Laboratory of Crystal Materials and Institute of Crystal Materials, Shandong University, Jinan 250100, China |
| Abstract: | We demonstrate a passively Q-switched Nd:LuVO4 laser at 916 nm by using a Nd, Cr:YAG crystal as the saturable absorber. As we know, it is the first time to realize the laser with a simple linear resonator. When the incident pump power increased from 14.6 W to 23.7 W, the pulse width of the Q-switched laser decreased from 24 ns to 21 ns. The pulse width was insensitive to the incident pump power in the experiment. The average output power of 288 mW with repetition rate of 39 kHz was obtained at an incident pump power of 22.5 W, with the optical-to-optical efficiency and slope efficiency 1.3% and 3.6%, respectively. |
| Keywords: | 42.55.Xi 42.60.Gd |
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