Growth of p- and n-dopable films from electrochemically generated C60 cations |
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Authors: | Bruno Carlo Marcaccio Massimo Paolucci Demis Castellarin-Cudia Carla Goldoni Andrea Streletskii Alexey V Drewello Thomas Barison Simona Venturini Alessandro Zerbetto Francesco Paolucci Francesco |
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Institution: | INSTM, Section of Bologna, Dipartimento di Chimica G. Ciamician, Alma Mater Studiorum, Università di Bologna Via Selmi 2, 40126 Bologna, Italy. |
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Abstract: | The formidable electron-acceptor properties of C60 contrast with its difficult oxidations. Only recently it has become possible to achieve reversibility of more than one electrochemical anodic process versus the six reversible cathodic reductions. Here we exploit the reactivity of electrochemical oxidations of pure C60 to grow a film of high thermal and mechanical stability on the anode. The new material differs remarkably from its precursor since it conducts both electrons and holes. Its growth and properties are consistently characterized by a host of techniques that include atomic force microscopy (AFM), Raman and infrared spectroscopies, X-ray-photoelectron spectroscopy (XPS), secondary-ion mass spectrometry (SIMS), scanning electron microscopy and energy-dispersive X-ray analysis (SEM-EDX), matrix-assisted laser desorption/ionization (MALDI), and a variety of electrochemical measurements. |
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