SiGe HBT集电结耗尽层渡越时间模型

集电结耗尽层的渡越时间是影响晶体管交流放大系数和频率特性的重要参数。本文分三种情况求解了SiGe HBT集电结耗尽层宽度。建立了不同集电极电流密度下的集电结耗尽层渡越时间模型，该模型考虑了基区扩展效应。利用MATLAB对该模型进行了模拟，定量地研究了集电结反偏电压、集电区掺杂磷或砷的浓度、集电区宽度对集电结耗尽层渡越时间的影响。模拟结果表明：随着集电结反偏电压、集电区掺杂浓度以及集电区宽度的增大，集电结耗尽层渡越时间增大；集电结耗尽层渡越时间对薄基区的SiGe HBT频率特性影响显著，不能忽略。

Model of transit time for SiGe HBT collector junction depletion-layer

The transit time through collector junction depletion-layer is an important parameter that influences AC gain and frequency performance. In SiGe heterojunction bipolar transistor (HBT) collector junction, the depletion-layer width is given in three cases. The models of collector depletion-layer transit time, considering the collector current densities and base extension effect, are established and simulated using MATLAB. The influence of the different collector junction bias voltage, collector concentration of As or P dopant and collector width on collector junction transit time is quantitatively studied. When the collector junction bias voltage, collector doping concentration and collector width are large, the transit time is quite long. And, from the results of simulations, the influence of the collector depletion-layer transit time on frequency performance is considerable in SiGe HBT with a thin base, so it could not be ignored.