Excess electrons in reduced rutile and anatase TiO2 |
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Authors: | Wen-Jin Yin Bo Wen Chuanyao Zhou Annabella Selloni Li-Min Liu |
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Affiliation: | 1. School of Physics, Beihang University, Beijing, 100083, China;2. Beijing Computational Science Research Center, Beijing, 100084, China;3. Department of Chemistry, Princeton University, Princeton, NJ 08544, United States;4. State Key Laboratory of Molecular Reaction Dynamics, Dalian Institute of Chemical Physics, Chinese Academy of Science, 457 Zhongshan Road, Dalian, 116023, Liaoning, PR China;5. School of Physics and Electronic Science, Hunan University of Science and Technology, Xiangtan, 411201, China |
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Abstract: | As a prototypical photocatalyst, TiO2 is a material of scientific and technological interest. In photocatalysis and other applications, TiO2 is often reduced, behaving as an n-type semiconductor with unique physico-chemical properties. In this review, we summarize recent advances in the understanding of the fundamental properties and applications of excess electrons in reduced, undoped TiO2. We discuss the characteristics of excess electrons in the bulk and at the surface of rutile and anatase TiO2 focusing on their localization, spatial distribution, energy levels, and dynamical properties. We examine specific features of the electronic states for photoexcited TiO2, for intrinsic oxygen vacancy and Ti interstitial defects, and for surface hydroxyls. We discuss similarities and differences in the behaviors of excess electrons in the rutile and anatase phases. Finally, we consider the effect of excess electrons on the reactivity, focusing on the interaction between excess electrons and adsorbates. |
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Keywords: | Corresponding author. |
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