High-efficiency erbium ion luminescence in silicon nanocrystal systems

The photoluminescence spectra and kinetics of both erbium-doped and undoped multilayer structures of quasi-ordered silicon nanocrystals in a silicon dioxide matrix were studied. It was shown that the optical excitation energy of silicon nanocrystals 2–3 nm in size can be practically completely transferred to Er³⁺ ions in the oxide surrounding the nanocrystals, with its subsequent radiation at 1.5 µm. Possible reasons for the high excitation efficiency of the Er³⁺ ions are discussed, and the conclusion is drawn that the Förster mechanism is dominant in the energy transfer processes occurring in these structures.