Recent Progress in Mid- and Far-Infrared Semiconductor Detectors |
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| Authors: | W Z Shen |
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| Institution: | (1) Department of Applied Physics, Shanghai Jiao Tong University, 1954 Hua Shun Road, Shanghai, 200030, China;(2) National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Shanghai, 200083, China |
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| Abstract: | The recent developments of semiconductor infrared detectors in extending the wavelength coverage and improving the focal plane array (FPA) performance are reviewed. The emphasis is on the GeSi/Si heterojunction infrared photoemission detectors (HIPs), GaAs/AlGaAs quantum well infrared photodetecots (QWIPs), Si, Ge and GaAs blocked impurity band detectors (BIBS), and Si and GaAs homojunction interfacial work-function internal photo-emission (HIWIP) far-infrared (FIR) detectors. The advantages, current status, and potential limitations of these infrared detectors have also been discussed. |
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| Keywords: | progress infrared semiconductor detector |
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