| Theoretical Studies on the Reaction Mechanism of AsCl_3 with H_2 in the Vapor Phase Epitaxy of GaAs |
| |
| 作者姓名： | MA Lina GUAN Wen-Jiaa b XU Chang-Zhia SUN Ren-Ana② a |
| |
| 作者单位： | MA Lina GUAN Wen-Jiaa，b XU Chang-Zhia SUN Ren-Ana② a (School of Chemistry and Chemical Engineering，Liaoning Normal University，Dalian 116029，China) b (School of Pharmaceutical Science，Sun Yat-sen University，Guangzhou 510080，China) |
| |
| 基金项目： | Liaoning Provincial Department of Education (990321076) |
| |
| 摘 要： | The reaction mechanism of AsCl3 with H2 has been studied by using the method of BHandHLYP in Density Functional Theory (DFT) at the 6-311G** basis set. The transition state of each reaction is verified via the analysis of vibration mode and Intrinsic Reaction Coordinate (IRC). Meanwhile,single-point energy has been calculated at the QCISD(T)/6-311G** level,and the zero-point energy correction has been made to the total energy and reaction energy barrier. It shows that AsCl3 reacts with H2 to first result in AsHCl2 which may incline to self-decompose and finally afford the product As2,or continue to react with H2 to provide the product AsH3. The computing result demonstrates that the former is the main reaction channel.
|
| 关 键 词： | 三氯化砷 氢气 反应机制 汽相外延附生 砷化镓 理论研究 |
Theoretical Studies on the Reaction Mechanism of AsCl3 with H2 in the Vapor Phase Epitaxy of GaAs |
| |
| MA Lin,GUAN Wen-Jia,XU Chang-Zhi,SUN Ren-An.Theoretical Studies on the Reaction Mechanism of AsCl_3 with H_2 in the Vapor Phase Epitaxy of GaAs[J].Chinese Journal of Structural Chemistry,2007,26(3):267-272. |
| |
| Authors: | MA Lin GUAN Wen-Jia XU Chang-Zhi SUN Ren-An |
| |
| Institution: | 1. School of Chemistry and Chemical Engineering,Liaoning Normal University, Dalian 116029, China
2. School of Chemistry and Chemical Engineering,Liaoning Normal University, Dalian 116029, China;School of Pharmaceutical Science, Sun Yat-sen University, Guangzhou 510080, China |
| |
| Abstract: | The reaction mechanism of AsCl3 with H2 has been studied by using the method of BHandHLYP in Density Functional Theory (DFT) at the 6-311G** basis set. The transition state of each reaction is verified via the analysis of vibration mode and Intrinsic Reaction Coordinate (IRC).Meanwhile, single-point energy has been calculated at the QCISD(T)/6-311G** level, and the zero-point energy correction has been made to the total energy and reaction energy barrier. It shows that AsCl3 reacts with H2 to first result in AsHCl2 which may incline to self-decompose and finally afford the product As2, or continue to react with H2 to provide the product ASH3. The computing result demonstrates that the former is the main reaction channel. |
| |
| Keywords: | AsCl3/H2 transition state DFT GaAs Epitaxy Vapor Phase Reaction Mechanism Studies computing reaction channel continue result incline product correction total energy barrier level QCISD transition state analysis vibration mode Intrinsic |
| 本文献已被 CNKI 维普 万方数据 等数据库收录！ |
