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1.3μm场助TE光阴极In1-xGaxAsyP1-y/InP的能带计算及外延层的设计
引用本文:王存让 郭里辉. 1.3μm场助TE光阴极In1-xGaxAsyP1-y/InP的能带计算及外延层的设计[J]. 光子学报, 1992, 21(1): 73-78
作者姓名:王存让 郭里辉
作者单位:中国科学院西安光学们密机械研究所,中国科学院西安光学们密机械研究所,中国科学院西安光学们密机械研究所,中国科学院西安光学们密机械研究所,中国科学院西安光学们密机械研究所 西安 710068,西安 710068,西安 710068,西安 710068,西安 710068
摘    要:本文首先简述了1.3μm场助TE光阴极InP(衬底)/In1-xGaxAsyP1-y(光吸收层)/InP(发射层)/Ag/CsO的工作原理,并对其能带结构进行了计算,得到了In1-xGaxAsyP1-y(光吸收层)/InP(发射层)的势垒高度、掺杂、InP发射层厚度、组份、渐变区宽度,偏压及耗尽层宽度间的定量关系。并由此出发,对光阴极各参数的设计进行了分析讨论。

关 键 词:场助光阴极  异质结  能带计算
收稿时间:1991-03-11

CALCULATION OF ENERGY BAND OF FIELD-ASSISTED InGaAsP/ InP PHOTOCATHODE IN THE 1.3μm RANGE AND EPITAXIAL LAYER DESIGN
Wang Cunrang,Guo Lihui,Li Jinming,Hou Xun,Zhang Gongli Xian Institute of Optics and Precision Mechanics,Academia Sinica,Xian. CALCULATION OF ENERGY BAND OF FIELD-ASSISTED InGaAsP/ InP PHOTOCATHODE IN THE 1.3μm RANGE AND EPITAXIAL LAYER DESIGN[J]. Acta Photonica Sinica, 1992, 21(1): 73-78
Authors:Wang Cunrang  Guo Lihui  Li Jinming  Hou Xun  Zhang Gongli Xian Institute of Optics  Precision Mechanics  Academia Sinica  Xian
Affiliation:Wang Cunrang,Guo Lihui,Li Jinming,Hou Xun,Zhang Gongli Xian Institute of Optics and Precision Mechanics,Academia Sinica,Xian 710068
Abstract:In this paper, the principle of the field-assisted photocathode InP(substrate)/ InGaAsP(photon absorber layer)/InP(emitter layer)/Ag/CsO, responsed to 1.3μm was . described briefly. Its energy band was calculated. We attained, the quantitative relationship among the barrier haight between InGaAsP photon absorber layer and InP emitter layer, doping level, thickness of InP emitter layer, the InGaAsP/InP hetero-junction composition grading distance, voltage of reversed bias and the width of depleting layer, basised on this relationship. All.parameters of photocathode are discussed.
Keywords:Field assisted photocathode  Heterojunction  Calculation of energy band
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