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High-resolution X-ray diffraction studies of combinatorial epitaxial Ge (0 0 1) thin-films on Ge (0 0 1) substrates
Authors:Yuncheng Zhong  Brian A. Collins
Affiliation:a Advanced Photon Source, Argonne National Laboratory, Argonne, IL 60439, United States
b Department of Physics and Astronomy, University of North Carolina, Chapel Hill, NC 27599, United States
Abstract:We report high-resolution X-ray diffraction studies of combinatorial epitaxial Ge (0 0 1) thin-films with varying doping concentrations of Co and Mn grown on Ge (0 0 1) substrates. The crystalline structure of the epitaxial thin-film has been determined using crystal-truncation rod (CTR) measurements and fitting analysis. By analyzing the fine interference fringes in the CTR intensity profile, strain sensitivity of ∼0.003% has been achieved. Using this method, the evolution of interfacial structures has been quantified as a function of doping concentration.
Keywords:61.10.Nz   68.55.&minus  a   61.80.&minus  x
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