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Influence on the laser induced backside dry etching of thickness and material of the absorber, laser spot size and multipulse irradiation
Authors:T Smausz  N Kresz  Zs Márton
Institution:a Department of Optics and Quantum Electronics, University of Szeged, H-6720 Szeged, Dóm tér 9, Hungary
b Department of Environmental Physics and Laser Spectroscopy, University of Pécs, H-7624 Pécs, Ifjúság útja 6, Hungary
c Hungarian Academy of Sciences and University of Szeged, Research Group on Laser Physics, H-6720 Szeged, Dóm tér 9, Hungary
Abstract:Laser induced backside dry etching method (LIBDE) was developed - analogously to the well-known laser induced backside wet etching (LIBWE) technique - for the micromachining of transparent materials. In this procedure, the absorbing liquid applied during LIBWE was replaced with solid metal layers. Fused silica plates were used as transparent targets. These were coated with 15-120 nm thick layers of different metals (silver, aluminium and copper). The absorbing films were irradiated by a nanosecond KrF excimer laser beam through the quartz plate. The applied fluence was varied in the 150-2000 mJ/cm2 range, while the irradiated area was between 0.35 and 3.6 mm2. At fluences above the threshold values, it was found that the metal layers were removed from the irradiated spots and the fused silica was etched at the same time. In our experiments, we investigated the dependence of the main parameters (etch rate and threshold) of LIBDE on the absorption of the different metal layers (silver, copper, aluminium), on the size of the irradiated area, on the film thickness and on the number of processing laser pulses.
Keywords:Dry etching  Excimer laser  Transparent material  Microprocessing  Thin film absorber  Fused silica
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