Effect of temperature on pulsed laser deposition of HgCdTe films |
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Authors: | M Liu XC Lin CS Chen |
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Institution: | a College of Physics and Electronics, Shandong Normal University, Jinan 250014, PR China b Shanghai Institute of Technical Physics, Chinese Academy Sciences, Shanghai 200083, PR China |
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Abstract: | HgCdTe thin films have been deposited on Si(1 1 1) substrates at different substrate temperatures by pulsed laser deposition (PLD). An Nd:YAG pulsed laser with a wavelength of 1064 nm was used as laser source. The influences of the substrate temperature on the crystalline quality, surface morphology and composition of HgCdTe thin films were characterized by X-ray diffraction (XRD), selected area electron diffraction (SAED), atomic force microscopy (AFM) and energy dispersive X-ray spectroscopy (EDS). The results show that in our experimental conditions, the HgCdTe thin films deposited at 200 °C have the best quality. When the substrate temperature is over 250 °C, the HgCdTe film becomes thermodynamically unstable and the quality of the film is degraded. |
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Keywords: | 68 55 &minus a 73 40 Sx |
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