Combinatorial synthesis and characterization of a ternary epitaxial film of Co and Mn doped Ge (0 0 1) |
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Authors: | F. Tsui B.A. Collins A. Mellnik S. Vogt |
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Affiliation: | a Department of Physics and Astronomy, University of North Carolina, Chapel Hill, NC 27599, USA b Advanced Photon Source, Argonne National Laboratory, Argonne, IL 60439, USA |
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Abstract: | We report combinatorial molecular beam epitaxy synthesis and properties of a ternary epitaxial film of Co and Mn co-doped Ge grown on Ge (0 0 1) substrate. Structural effects were examined in situ by reflection high-energy electron diffraction and ex situ by microbeam X-ray diffraction techniques, and magnetic properties were probed by using magnetooptic Kerr effect. Ternary epitaxial phase diagrams have been studied for total doping concentrations up to 30 at.%, where regions of coherent epitaxy and rough disordered growth and those of near room temperature ferromagnetic ordering have been identified. |
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Keywords: | Epitaxial film Magnetic semiconductor Group IV semiconductor Transition metal doping Combinatorial thin film |
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