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Epitaxial LSMO films grown on MgO single crystalline substrates
Authors:M Španková  Š Chromik  K Sedlá?ková  S Lucas
Institution:a Institute of Electrical Engineering, Slovak Academy of Sciences, Dúbravská cesta 9, 84104 Bratislava, Slovak Republic
b University of Namur, LARN Laboratory, 61 rue de Bruxelles, B-5000 Namur, Belgium
c Department of Nuclear Physics and Technology, Ilkovi?ova 3, 812 19 Bratislava, Slovak Republic
Abstract:The manganite La0.67Sr0.33MnO3 (LSMO) layers are deposited on single crystal MgO(0 0 1) substrates using a magnetron dc sputtering. The crystalline perfection of the layers, both the as-prepared and the annealed, are characterized by X-ray diffraction technique, rocking curve measurements, Rutherford backscattering spectroscopy (RBS) and transmission electron microscopy (TEM). TEM analyses give evidence of the epitaxial growth of the annealed LSMO with a nanocrystalline surface layer. The temperature dependence of resistance in the 77-340 K range is measured by a standard four-probe technique. While the as-prepared film does not show any transition from paramagnetic to ferromagnetic state, the film annealed in oxygen shows steep R(T) dependence with a peak at 330 K and maximal slope (dR/dT) at 290 K where the maximal sensitivity is 3% K−1.
Keywords:LSMO films  Magnetron sputtering  X-ray diffracion  Transmission electron microscopy  Rutherford backscattering  Electrical properties
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