Epitaxial LSMO films grown on MgO single crystalline substrates |
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Authors: | M Španková Š Chromik K Sedlá?ková S Lucas |
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Institution: | a Institute of Electrical Engineering, Slovak Academy of Sciences, Dúbravská cesta 9, 84104 Bratislava, Slovak Republic b University of Namur, LARN Laboratory, 61 rue de Bruxelles, B-5000 Namur, Belgium c Department of Nuclear Physics and Technology, Ilkovi?ova 3, 812 19 Bratislava, Slovak Republic |
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Abstract: | The manganite La0.67Sr0.33MnO3 (LSMO) layers are deposited on single crystal MgO(0 0 1) substrates using a magnetron dc sputtering. The crystalline perfection of the layers, both the as-prepared and the annealed, are characterized by X-ray diffraction technique, rocking curve measurements, Rutherford backscattering spectroscopy (RBS) and transmission electron microscopy (TEM). TEM analyses give evidence of the epitaxial growth of the annealed LSMO with a nanocrystalline surface layer. The temperature dependence of resistance in the 77-340 K range is measured by a standard four-probe technique. While the as-prepared film does not show any transition from paramagnetic to ferromagnetic state, the film annealed in oxygen shows steep R(T) dependence with a peak at 330 K and maximal slope (dR/dT) at 290 K where the maximal sensitivity is 3% K−1. |
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Keywords: | LSMO films Magnetron sputtering X-ray diffracion Transmission electron microscopy Rutherford backscattering Electrical properties |
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