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A scheme for a topological insulator field effect transistor
Institution:1. Institute of Nanoscience and Nanotechnology, University of Kashan, Kashan, Iran;2. Depertment of Electrical and Computer Engineering, University of Kashan, Kashan, Iran;3. Technical and Vocational University, Kashan, Iran;1. Department of Physics, University of Calcutta, 92 Acharya Prafulla Chandra Road, Kolkata 700009, India;2. Variable Energy Cyclotron Centre, 1/AF, Bidhannagar, Kolkata 700064, India;1. Department of Physics, Asansol Engineering College, Kanyapur Asansol 713305, West Bengal, India;2. Department of Physics, National Institute of Technology, Mahatma Gandhi Avenue, Durgapur 713209, West Bengal, India;1. College of Science, Nanjing University of Aeronautics and Astronautics, Jiangsu 210016, China;2. Department of Physics, Zhejiang Ocean University, Zhoushan 316000, China;1. Department of Physics, Payame Noor University, P.O.Box 19395-3697 Tehran, Iran;2. Department of Physics, Simon Fraser University, Burnaby, British Columbia V5A1S6 Canada;1. Department of Electrical and Computer Engineering, University of Seoul, Seoul 02504, Republic of Korea;2. School of Electrical Engineering, Korea University, Seoul 02841, Republic of Korea
Abstract:We propose a scheme for a topological insulator field effect transistor. The idea is based on the gate voltage control of the Dirac fermions in a ferromagnetic topological insulator channel with perpendicular magnetization connecting to two metallic topological insulator leads. Our theoretical analysis shows that the proposed device displays a switching effect with high on/off current ratio and a negative differential conductance with a good peak to valley ratio.
Keywords:Field effect transistor  Switching effect  Negative differential conductance  Topological insulator
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