Enhanced Seebeck effect in graphene devices by strain and doping engineering |
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| Affiliation: | 1. Institut d''Electronique Fondamentale, UMR8622, CNRS, Université Paris Sud, 91405 Orsay, France;2. Center for Computational Physics, Institute of Physics, Vietnam Academy of Science and Technology, P.O. Box 429 Bo Ho, 10000 Hanoi, Viet Nam;1. Department of Solid Mechanics and Design, Faculty of Mechanical Engineering, University Technology Malaysia – UTM, 81310 UTM Skudai, Johor, Malaysia;2. School of Engineering, Griffith University, Gold Coast Campus, Southport 4222, Australia;3. School of Engineering, The University of Newcastle, Callaghan, New South Wales 2308, Australia;1. Instituto de Ciencia de Materiales de Madrid (CSIC) – Cantoblanco, Madrid 28049, Spain;2. Departamento de Física, CCEN, Universidade Federal da Paraíba, Caixa Postal 5008, 58051-970 João Pessoa, PB, Brazil;1. State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, Wuhan University of Technology, Wuhan 430070, China;2. Department of Physics, University of Michigan, Ann Arbor, MI 48109, USA;1. State Key Laboratory for Modification of Chemical Fibres and Polymer Materials, College of Material Science and Engineering, Donghua University, Shanghai, 201620, China;2. Engineering Research Center of Advanced Glasses Manufacturing Technology, MOE, Donghua University, Shanghai, 201620, China |
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| Abstract: | In this work, we investigate the possibility of enhancing the thermoelectric power (Seebeck coefficient) in graphene devices by strain and doping engineering. While a local strain can result in the misalignment of Dirac cones of different graphene sections in the k-space, doping engineering leads to their displacement in energy. By combining these two effects, we demonstrate that a conduction gap as large as a few hundred meV can be achieved and hence the enhanced Seebeck coefficient can reach a value higher than 1.4 mV/K in graphene doped heterojunctions with a locally strained area. Such hetero-channels appear to be very promising for enlarging the applications of graphene devices as in strain and thermal sensors. |
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| Keywords: | Graphene Deformation Thermoelectric effect |
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