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Observation of room temperature negative differential resistance in solution synthesized ZnO nanorod
Institution:1. Millimeter-Wave Innovation Technology (MINT) Research Center, Dongguk University, Seoul 100-715, South Korea;2. Division of Electronics and Electrical Engineering, Dongguk University-Seoul, Seoul 100-715, South Korea;1. Institute of Physics, National Academy of Sciences of Ukraine, 03680 Kyiv, Ukraine;2. Research Physico-Technical Institute, State University of Nizhni Novgorod, 603950 Nizhni Novgorod, Russia;1. Institut de Physique et de Chimie des Matériaux de Strasbourg, Université de Strasbourg, CNRS UMR 7504, 23 rue du Loess, BP 43, F-67034 Strasbourg Cedex 2, France;2. Freiburg Institute for Advanced Studies, Albert-Ludwigs-Universität, Albertstr. 19, D-79104 Freiburg, Germany;1. Centro de Física de Materiales, Centro Mixto CSIC-UPV/EHU, Paseo Manuel de Lardizabal 5, E-20018 Donostia-San Sebastián, Spain;2. Donostia International Physics Center (DIPC), Paseo Manuel de Lardizabal 4, E-20018 Donostia-San Sebastián, Spain;3. IKERBASQUE, Basque Foundation for Science, E-48013 Bilbao, Spain;4. Departamento de Química-Física, UPV/EHU, Apartado 644, 48080 Bilbao, Spain;5. Department of Physics, Shanghai University, 200444 Shanghai, People''s Republic of China
Abstract:We report the observation of negative differential resistance (NDR) in solution synthesized ZnO nanorod. The ZnO nanorod was fabricated as a two terminal planar device using lithographically patterned Au electrodes. The measured current–voltage response of the device has shown a negative differential resistance behavior. The peak-to-valley current ratio of the NDR is found to be greater than 4. The mechanism of this observed NDR effect has been explained based on charge trapping and de-trapping at the nanoscale contacts. It is the first observation of negative differential resistance effect in solution synthesized ZnO nanorod.
Keywords:ZnO nanorod  Lithography  Nanoscale device  Planar device  Metal-semiconductor contact  Negative differential resistance
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