Interband and intraband radiation from the n-InGaAs/GaAs heterostructures with quantum wells under the conditions of injection in high lateral electric fields |
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| Affiliation: | 1. Institute of Physics, National Academy of Sciences of Ukraine, 03680 Kyiv, Ukraine;2. Research Physico-Technical Institute, State University of Nizhni Novgorod, 603950 Nizhni Novgorod, Russia;1. Institut de Physique et de Chimie des Matériaux de Strasbourg, Université de Strasbourg, CNRS UMR 7504, 23 rue du Loess, BP 43, F-67034 Strasbourg Cedex 2, France;2. Freiburg Institute for Advanced Studies, Albert-Ludwigs-Universität, Albertstr. 19, D-79104 Freiburg, Germany;1. Centro de Física de Materiales, Centro Mixto CSIC-UPV/EHU, Paseo Manuel de Lardizabal 5, E-20018 Donostia-San Sebastián, Spain;2. Donostia International Physics Center (DIPC), Paseo Manuel de Lardizabal 4, E-20018 Donostia-San Sebastián, Spain;3. IKERBASQUE, Basque Foundation for Science, E-48013 Bilbao, Spain;4. Departamento de Química-Física, UPV/EHU, Apartado 644, 48080 Bilbao, Spain;5. Department of Physics, Shanghai University, 200444 Shanghai, People''s Republic of China;1. Kantonsschule Frauenfeld, Ringstrasse 10, CH-8500 Frauenfeld, Switzerland;2. Instituto de Física Interdisciplinar y Sistemas Complejos IFISC (UIB-CSIC), E-07122 Palma de Mallorca, Spain |
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| Abstract: | The interband and intraband radiation from the n-InGaAs/GaAs heterostructures with the double and triple tunnel coupled and selectively doped quantum wells (QWs), which is appeared under the lateral electric field and in the presence of hole injection from the anode contact, has been investigated. A steep increase of the interband radiation intensity was found at the fields of E≥1.7 kV/cm. This effect should be related to the big lifetime of the injected charge carriers (~10−6 s) which exceeds by three orders of magnitude the lifetime in the similar bulk direct-band semiconductor. Its reason lies in spatial separation of the injected holes and electrons between coupled wells, firstly, by the built-in transverse electric field between wells and, secondly, due to the real-space transfer of carriers heated by the lateral electric field from the wide well to the narrow δ-doped one. Furthermore, an increase of the carrier concentration due to injection leads to an increase of that transition intensity and, consequently, to an intensity increase of the radiative intersubband transitions of carriers in QWs which results in a steep intensity increase of the far (50–120 µm) infrared radiation. |
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| Keywords: | Heterostructures Quantum wells Lateral electric field Near and far infrared radiation Injection Real space transfer |
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