首页 | 本学科首页   官方微博 | 高级检索  
     检索      


Impact of pressure on transport properties of AlGaN/GaN high electron mobility transistor
Institution:1. Department of Physics, Beijing Jiaotong University, Beijing 100044, People’s Republic of China;2. School of Electrical, Computer and Energy Engineering, Arizona State University, Tempe, AZ 85281, USA;1. Institute of Physics, National Academy of Sciences of Ukraine, 03680 Kyiv, Ukraine;2. Research Physico-Technical Institute, State University of Nizhni Novgorod, 603950 Nizhni Novgorod, Russia;1. Kantonsschule Frauenfeld, Ringstrasse 10, CH-8500 Frauenfeld, Switzerland;2. Instituto de Física Interdisciplinar y Sistemas Complejos IFISC (UIB-CSIC), E-07122 Palma de Mallorca, Spain;1. Centro de Física de Materiales, Centro Mixto CSIC-UPV/EHU, Paseo Manuel de Lardizabal 5, E-20018 Donostia-San Sebastián, Spain;2. Donostia International Physics Center (DIPC), Paseo Manuel de Lardizabal 4, E-20018 Donostia-San Sebastián, Spain;3. IKERBASQUE, Basque Foundation for Science, E-48013 Bilbao, Spain;4. Departamento de Química-Física, UPV/EHU, Apartado 644, 48080 Bilbao, Spain;5. Department of Physics, Shanghai University, 200444 Shanghai, People''s Republic of China
Abstract:The properties of AlxGa1−xN/GaN high electron mobility transistor (HEMT) impacted by pressure are characterized quantitatively. The results indicate that the dislocation density increases as the critical thickness decreases with increasing pressure. The two-dimensional electron gas density was found to be linearly changeable with the pressure. A simulation has been completed to verify the influence of electron mobility. The results show that the misfit dislocation scattering induced by the pressure is a major limiting factor for the properties of HEMT.
Keywords:Nitride semiconductor  Heterojunction  Two-dimensional electron gas  Mobility
本文献已被 ScienceDirect 等数据库收录!
设为首页 | 免责声明 | 关于勤云 | 加入收藏

Copyright©北京勤云科技发展有限公司  京ICP备09084417号