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Improvement of ZnO nanorod based quantum Dot (cadmium sulfide) sensitized solar cell efficiency by aluminum doping
Institution:1. Department of Nanomaterial Engineering, Tarbiat Modares University, Tehran, Iran;2. Department of Electrical Engineering, Tarbiat Modares University, Tehran, Iran;1. Donbass State Engineering Academy, Kramatorsk 84313, Ukraine;2. Grupo de Materia Condensada-UdeA, Instituto de Física, Facultad de Ciencias Exactas y Naturales, Universidad de Antioquia-UdeA, Calle 70 No. 52-21, Medellín, Colombia;3. Escuela de Ingeniería de Antioquia-EIA, Medellín, Colombia;4. Facultad de Ciencias, Universidad Autónoma del Estado de Morelos, Ave. Universidad 1001, CP 62209 Cuernavaca, Morelos, México;5. Institute of Physics, Kyiv 80028, Ukraine;1. Department of Mechanics, Huazhong University of Science and Technology, Wuhan 430074, China;2. Hubei Key Laboratory for Engineering Structural Analysis and Safety Assessment, Wuhan 430074, China;1. Department of Physics and Astronomy, University of Manitoba, Winnipeg, Canada R3T 2N2;2. Department of Solid State Physics, Yerevan State University, Yerevan, Armenia;1. School of Materials Science and Engineering, Shandong Jianzhu University, Jinan 250101, PR China;2. Beijing Aeronautical Manufacturing Technology Research Institute, Beijing 100024, PR China;1. Institute of Strength Physics and Materials Science of SB RAS, 2/4 Akademichesky Avenue, Tomsk 634021, Russia;2. V.D. Kuznetsov Siberian Physical Technical Institute of Tomsk State University, 1 Novosobornaja Square, Tomsk 634050, Russia
Abstract:This study investigates the performance of quantum dot sensitized solar cells (QDSSCs) based on aluminum (Al)-doped and undoped ZnO nanorods. Current density–voltage (JV) characterization shows that Al doping into ZnO nanorods (AZO NRs) can improve short circuit current density (Jsc) and the energy conversion efficiency (η) of QDSSCs. The maximum η=1.15% is achieved in QDSSCs when Al concentration is 0.5 wt%, as compared to undoped state where η=0.57%. These current densities and the energy conversion efficiency improvement are studied using the electrochemical impedance spectroscopy (EIS). EIS results indicate that the electron transport resistance in the photoanode of QDSCs is reduced with introduction of Al into ZnO structure, which leads to increasing Jsc. It is also found that recombination resistance reduces with introduction of Al into ZnO because of the upward displacement of Fermi level with respect to AZO conduction band (CB) and increasing electron density in the ZnO CB. This reduction of recombination resistance causes higher recombination rate in QDSCs based AZO NRs.
Keywords:Aluminum doped ZnO  Quantum dot sensitized solar cells  Electrochemical impedance spectroscopy  Charge transfer
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