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光致变色多阶光存储中的光学串扰分析
引用本文:沈全洪,徐端颐,齐国生,赵辉,雷志军,张启程. 光致变色多阶光存储中的光学串扰分析[J]. 光学学报, 2005, 25(10): 396-1400
作者姓名:沈全洪  徐端颐  齐国生  赵辉  雷志军  张启程
作者单位:清华大学精密仪器与机械学系国家光盘工程研究中心,北京,100084;清华大学精密仪器与机械学系国家光盘工程研究中心,北京,100084;清华大学精密仪器与机械学系国家光盘工程研究中心,北京,100084;清华大学精密仪器与机械学系国家光盘工程研究中心,北京,100084;清华大学精密仪器与机械学系国家光盘工程研究中心,北京,100084;清华大学精密仪器与机械学系国家光盘工程研究中心,北京,100084
基金项目:国家973计划重点基础研究规划项目(G19990330)资助课题.
摘    要:利用光致变色材料的灰度分阶特性可以实现多阶光存储。以傅里叶光学和光致变色记录符的可叠加性为基础,采用霍普金斯标量衍射理论的经典归-化坐标,对光致变色多阶光存储中的光学串扰进行了理论建模和数值分析。作为后续电通道补偿设计的前提。数值计算结果表明:相邻记录符与盘基信号的交叉串扰项是光学串扰的主要成分,且随着中心距的增加,相邻记录符引起的串扰迅速降低;当无寻道误差时,邻道记录符引起的串扰可以忽略;高阶记录符引起串扰要明显高于低阶的串扰。且影响多阶存储的可分阶性;实验结果很好地验证了所建立的模型的合理性。

关 键 词:光存储  光致变色  多阶  光学串扰  标量衍射
文章编号:0253-2239(2005)10-1396-5
收稿时间:2004-11-29
修稿时间:2005-03-21

Analysis of the Optical Crosstalk in Photochromic Multi-Level Optical Storage
Shen Quanhong,Xu Duanyi,Qi Guosheng,Zhao Hui,Lei Zhijun,Zhang Qicheng. Analysis of the Optical Crosstalk in Photochromic Multi-Level Optical Storage[J]. Acta Optica Sinica, 2005, 25(10): 396-1400
Authors:Shen Quanhong  Xu Duanyi  Qi Guosheng  Zhao Hui  Lei Zhijun  Zhang Qicheng
Affiliation:Optical Memory National Engineering Research Center, Department of Precision Instruments and Mechanology, Tsinghua University, Beijing 100084
Abstract:It has been proved by experiments that multi-level optical storage can be achieved by photochromic media. A theoretical model of optical crosstalk in photochromic multi-level storage is proposed, which is the basic of compensation and equalization in subsequent electrical system. This model is based on the normalized coordinates presented by Hopkins in the classical scalar diffraction theory and the superposition of Fourier optics and photochromic marks. The results of numerical simulation show that the crosstalk will decrease if the center distance increases, hence the crosstalk of adjacent track could be neglected if no track error. The cross term of the adjacent mark and unwritten disk is the main component of crosstalk. The crosstalk rate is approximately a proportion function of writing power, that is, crosstalk caused by high level photochromic mark is much higher than low level one. The experiment has well certified the theoretical model.
Keywords:optical storage    photochromic   multi-level   optical crosstalk   scalar diffraction
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