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F2-laser patterning of GaPO4 resonators for humidity sensing
Authors:JD Pedarnig  M Peruzzi  H Salhofer  R Schwödiauer  W Reichl  J Runck
Institution:(1) Angewandte Physik, Johannes-Kepler-Universität Linz, 4040 Linz, Austria;(2) Physik Weicher Materie, Johannes-Kepler-Universität Linz, 4040 Linz, Austria;(3) E+E Elektronik GmbH, 4209 Engerwitzdorf, Austria
Abstract:Piezoelectric gallium orthophosphate (GaPO4) thickness – shear mode resonators were patterned by F2-laser ablation and employed for gas sensing. The thickness of GaPO4 crystals was reduced from sim215 mgrm to sim115 mgrm by laser ablation and the piezoelectric fundamental resonance frequency in the thinned region increased thereby from sim6 MHz to sim12 MHz. The Q values of laser-thinned and pristine resonators in air were Qap7000 and Qap95000, respectively. The GaPO4 crystals were coated by thin polyimide layers that served as receptor for water vapour. The resonance frequency of coated crystals decreased linearly with increasing level of relative humidity (RH) and the sensitivity for laser-patterned 12 MHz GaPO4 resonators, SRHap-98 Hz/%thinspRH, was much larger than for the pristine 6 MHz GaPO4 resonators. PACS 61.10.-i; 68.37.-d; 81.15.Fg
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