|
|||||
|
|
Edge states of epitaxially grown graphene on 4H-SiC(0001) studied by scanning tunneling microscopy |
|
| Authors: | M Ye Y T Cui Y Nishimura Y Yamada S Qiao A Kimura M Nakatake H Namatame M Taniguchi |
| Institution: | 1. Graduate School of Science, Hiroshima University, 1-3-1
Kagamiyama, 739-8526, Higashi-Hiroshima, Japan 2. Hiroshima Synchrotron Radiation Center, Hiroshima University, 2-313 Kagamiyama, 739-0046, Higashi-Hiroshima, Japan 3. Department of Physics, Laboratory of Advanced Materials, and Surface Physics Laboratory (National Key Laboratory), Fudan University, 200433, Shanghai, P.R. China |
| Abstract: | The edge properties of single layer graphene epitaxially grown on partially graphitized 4H-SiC(0001) surface have been investigated with scanning tunneling microscopy (STM). We directly observed the atomic-structure dependency of the super structures in the vicinity of armchair and zigzag edges due to the different kinds of symmetry-breaking at those two edges. |
| Keywords: | |
| 本文献已被 SpringerLink 等数据库收录！ | |