Raman scattering from localized vibrational modes of boron impurities in silicon |
| |
| Affiliation: | 1. Department of Chemistry, University of Uyo, Uyo, Akwa Ibom State, Nigeria;2. Department of Agriculture and Environmental Sciences, Lincoln University in Missouri, Jefferson City, MO 65101, USA;3. Butler University, 4600 Sunset Avenue, Indianapolis, IN 46208, USA;1. School of Mechanical Engineering, Northwestern Polytechnical University, Xi’an 710072, PR China;2. Department of Civil and Environmental Engineering, Northwestern University, Evanston 60208, IL, USA;3. Institute of Printing and Packaging Engineering, Xi’an University of Technology, Xi’an 710048, PR China;1. State Key Laboratory of Phytochemistry and Plant Resources in West China, Kunming Institute of Botany, Chinese Academy of Sciences, China;2. Department of Veterinary Physiology, Biochemistry and Pharmacology, University of Ibadan, Nigeria |
| |
| Abstract: | Reflection Raman spectroscopy has been performed on boron doped uncompensated silicon wafers. The doping of 1.5 1020 cm−3 is obtained by diffusion. Two localized modes associated with B10 and B11 are observed respectively at 642 and 619 cm−1. The position of the peaks does not differ more than 2 cm− from the infrared absorption results, obtained with compensated samples. |
| |
| Keywords: | |
| 本文献已被 ScienceDirect 等数据库收录！ |
|
