An infrared localized vibrational mode technique for measuring segregation coefficients |
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| Affiliation: | 1. Graduate School of Engineering, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577, Japan;2. Institute for Materials Research, Tohoku University, Katahira 2-1-1, Aoba-ku, Sendai 980-8577, Japan;3. Research Center for Structure Materials, National Institute for Materials Science (NIMS), 1-2-1 Sengen, Tsukuba 305-0047, Japan;1. Institute for Materials Research, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577, Japan;2. Research Center for Structural Materials, National Institute for Materials Science (NIMS), 1-2-1 Sengen, Tsukuba 305-0047, Japan;3. Formerly graduate student, Department of Metallurgy, Tohoku University, currently at JFE Steel Corporation, 1-6-1 Minato, Miyagino-ku, Sendai 983-0001, Japan.;4. Graduate School of Humanities and Sustainable System Sciences, Osaka Prefecture University, 1-1 Gakuen-cho, Naka-ku, Sakai 599-8531, Japan;5. The Electron Microscopy Center, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577, Japan;1. ICMAB-CSIC, Campus de la UAB, E-08193, Bellaterra, Barcelona, Spain;2. ICMA-CSIC-Universidad de Zaragoza, Pedro Cerbuna 12, E-50009 Zaragoza, Spain;1. Muroran R&D Lab., Technical Research & Development Bureau, Nippon Steel & Sumitomo Metal Corp., 12 Nakamachi Muroran, Hokkaido 050-8550, Japan;2. Technical Research & Development Bureau, Nippon Steel & Sumitomo Corp., 20-1 Shintomi, Futtsu, Chiba 293-8511, Japan;3. Institute for Materials Research, Tohoku University, 2-1-1 Katahira Aoba-ku, Sendai 980-8577, Japan |
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| Abstract: | An optical technique is described for measuring segregation coefficients of some impurities in elemental and compound semiconductors. Information about the local crystal environment of the impurity and impurity site distribution as well as segregation coefficients is obtained. Horizontal Bridgman grown GaAs and InSb crystals were doped with phosphorus and aluminum. The segregation coefficients of these isoelectronic impurities were measured as 4 and 6 for GaAs:P and InSb:P, respectively. In GaAs:Al crystals, silicon was observed as a contaminant with [Si] roughly proportional to [Al], and hence no simple k for Al in GaAs could be given. The segregation coefficient for Al in InSb was found to be near 5. |
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