Alloy composition effects on the gain and the differential gain for CdZnTe based II–VI semiconductor lasers |
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| Institution: | 1. Department of Physics, Mohanlal Sukhadia University, Udaipur 313001, India;2. Microelectronics Research Center, Iowa State University of Science and Technology, Ames, IA 50011, USA;1. State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, PO BOX 912, Beijing 100083, People’s Republic of China;2. Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences, Suzhou 215123, People’s Republic of China;1. School of Material Science and Engineering, University of Jinan, Jinan, 250022, PR China;2. Chemical Engineering and Technology, Cracow University of Technology, Krakow, Poland;1. Graduate School of Science and Engineering, Saitama University, Saitama, 338-8570, Japan;2. Department of Electronics and Communication Engineering, Hajee Mohammad Danesh Science and Technology University, Dinajpur, 5200, Bangladesh;3. Department of Electrical and Electronic Engineering, University of Rajshahi, Rajshahi, Bangladesh |
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| Abstract: | We study the variation of the gain and the differential gain for a quantum well laser based on the CdZnTe alloys. We calculate theoretically the optical gain of CdZnTe based quantum well laser, as function of the alloys composition for various values of carrier’s densities. Our study is based on the parabolic model with the intraband relaxation taken into account. Finally, we investigate how the composition alloys affects the differential gain of quantum well lasers. |
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